SQ9945 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 60V 5.4A 8SOIC
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | Configuration | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Grade | Power - Max [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 470 pF | 12 nC | Surface Mount | 2.5 V | 8-SOIC | 64 mOhm | 2 N-Channel (Dual) | 5.4 A | -55 °C | 175 ░C | AEC-Q101 | Automotive | 4 W | 60 V | 8-SOIC | 3.9 mm | 0.154 in | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 nC | Surface Mount | 3 V | 8-SOIC | 80 mOhm | 2 N-Channel (Dual) | 3.7 A | -55 °C | 175 ░C | 2.4 W | 60 V | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | |||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 470 pF | 12 nC | Surface Mount | 2.5 V | 8-SOIC | 64 mOhm | 2 N-Channel (Dual) | 5.4 A | -55 °C | 175 ░C | 4 W | 60 V | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate |