Catalog
650V, 12A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 12A, THD, Silicon-carbide (SiC) SBD
650V, 12A, THD, Silicon-carbide (SiC) SBD
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Package / Case | Operating Temperature - Junction | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Supplier Device Package | Technology | Mounting Type | Speed | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 600 pF | 650 V | 12 A | TO-220-2 | 175 °C | 60 µA | 0 ns | TO-220ACFP | SiC (Silicon Carbide) Schottky | Through Hole | 500 mA | 1.5 V |