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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Vgs (Max) [Max] | FET Type | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 8 V | N-Channel | 350 mW | 6.25 W | 93 pF | 150 °C | -55 °C | MOSFET (Metal Oxide) | 950 mV | 20 V | 1.6 nC | 1.5 V 4.5 V | 1.8 A | 150 mOhm | SC-101 SOT-883 | SOT-883 | Surface Mount |