FDPC8016S Series

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Part	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power - Max	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor FDPC8016S	Logic Level Gate	Surface Mount	3.8 mOhm	20 A 35 A	2375 pF	2 N-Channel (Dual) Asymmetrical	25 V	8-PowerWDFN	2.5 V	2.1 W 2.3 W	MOSFET (Metal Oxide)	35 nC	-55 °C	150 °C	Power Clip 56

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Key Features

• Q1 N-ChannelMax. RDS(on)= 3.8 mΩ at VGS= 10 V, ID= 20 AMax. RDS(on)= 4.7 mΩ at VGS= 4.5 V, ID= 18 A

• Q2 N-ChannelMax. RDS(on)= 1.4 mΩ at VGS= 10 V, ID= 35 AMax. RDS(on)= 1.7 mΩ at VGS= 4.5 V, ID= 32 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM(Q2) have been designed to provide optimal power efficiency.