High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, π-MOSⅨ
| Part | Operating Temperature | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | TO-220-3 Full Pack | 11 A | 1320 pF | 600 V | 10 V | 30 V | TO-220SIS | N-Channel | 4 V | 34 nC | Through Hole | 45 W | MOSFET (Metal Oxide) | 650 mOhm |