Catalog
650V 7A TO-220FM, Low-noise Power MOSFET
Description
AI
R6507ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 7A TO-220FM, Low-noise Power MOSFET
650V 7A TO-220FM, Low-noise Power MOSFET
| Part | Operating Temperature | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 150 °C | TO-220FM | N-Channel | 20 nC | MOSFET (Metal Oxide) | 4 V | 390 pF | Through Hole | 7 A | 650 V | 20 V | 46 W | TO-220-3 Full Pack | 10 V | 665 mOhm |