TK4A60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 600V 3.7A TO220SIS
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Package / Case | Vgs (Max) | FET Type | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 11 nC | Through Hole | 540 pF | 3.7 A | 600 V | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 30 V | N-Channel | 35 W | 2 Ohm | 4.4 V | 150 °C | 10 V | TO-220SIS |