NSF030120D7A0-Q Series

1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications

Catalog

1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications

Part	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Qualification	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs
Nexperia USA Inc. NSF030120D7A0-QJ	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1.2 kV	69 A	15 V 18 V	Surface Mount	TO-236-7	306 W	AEC-Q101	N-Channel	22 V	-10 V	Automotive	2600 pF	45 mOhm	2.9 V	175 °C	-55 °C	113 nC

Catalog

1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications

Description

The NSF030120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives.