High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, D2PAK, DTMOSⅣ
| Part | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Technology | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 250 mOhm | 35 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 150 °C | 1300 pF | 130 W | D2PAK | N-Channel | 10 V | 13.7 A | Surface Mount | 30 V | 3.5 V | 650 V |