SI4831 Series

Catalog

MOSFET P-CH 30V 6.6A 8SO

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Feature	Technology	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SI4831BDY-T1-GE3	2 W 3.3 W	-55 °C	150 °C	20 V	4.5 V 10 V	6.6 A	3 V	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	8-SOIC	8-SOIC	3.9 mm	0.154 in	625 pF	30 V	26 nC	P-Channel	Surface Mount	42 mOhm
Vishay General Semiconductor - Diodes Division SI4831DY-T1-E3		-55 °C	150 °C	20 V	4.5 V 10 V	5 A	1 V	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	8-SOIC	8-SOIC	3.9 mm	0.154 in		30 V		P-Channel	Surface Mount	45 mOhm	20 nC	2 W
Vishay General Semiconductor - Diodes Division SI4831BDY-T1-E3	2 W 3.3 W	-55 °C	150 °C	20 V	4.5 V 10 V	6.6 A	3 V	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	8-SOIC	8-SOIC	3.9 mm	0.154 in	625 pF	30 V	26 nC	P-Channel	Surface Mount	42 mOhm