SI4654 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 25V 28.6A 8SO
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.5 W 5.9 W | 3770 pF | 25 V | MOSFET (Metal Oxide) | 8-SOIC | -55 °C | 150 °C | 28.6 A | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | 4 mOhm | 16 V | 4.5 V 10 V | Surface Mount | 2.5 V | 100 nC |