RFN10RSM2S Series

200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode

Catalog

200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode

Part	Current - Average Rectified (Io)	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology
Rohm Semiconductor RFN10RSM2STL1	10 A	175 °C	200 V	200 mA 500 ns	TO-277A	Surface Mount	960 mV	3-PowerDFN TO-277	25 ns	1 µA	Standard

Catalog

200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode

Key Features

• Low forward voltage, Low switching loss, High current overload capacity

Description

RFN10RSM2S is a silicon epitaxial planar type ultra fast recovery diode featuring low VFand low switching loss. Ideal for general rectification applications.