Catalog
200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode
Description
AI
RFN10RSM2S is a silicon epitaxial planar type ultra fast recovery diode featuring low VFand low switching loss. Ideal for general rectification applications.
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200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode
200V 10A 15ns, TO-277A, Ultra Fast Recovery Diode
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Operating Temperature - Junction | Package / Case | Technology | Mounting Type | Speed | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 960 mV | 200 V | 10 A | 1 µA | 25 ns | 175 °C | TO-277 3-PowerDFN | Standard | Surface Mount | 200 mA 500 ns | TO-277A |