FQPF13N50CF Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 13 A, 540 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 13 A, 540 mΩ, TO-220F

Part	Technology	Vgs (Max)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
ON Semiconductor FQPF13N50CF	MOSFET (Metal Oxide)	30 V	TO-220-3 Full Pack	48 W	13 A	540 mOhm	N-Channel	2055 pF	-55 °C	150 °C	4 V	500 V	10 V	Through Hole	56 nC	TO-220F-3

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 13 A, 540 mΩ, TO-220F

Key Features

• 13A, 500V, RDS(on)= 540mΩ(Max.) @VGS= 10 V, ID= 6.5A

• Low gate charge ( Typ. 43nC)

• Low Crss( Typ. 20pF)

• 100% avalanche tested

• Fast recovery body diode (Typ. 100ns)

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.