FGL12040WD Series

IGBT, 1200 V, 40 A Field Stop Trench

Catalog

IGBT, 1200 V, 40 A Field Stop Trench

Part	Gate Charge	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	IGBT Type	Power - Max [Max]	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Current - Collector Pulsed (Icm)	Switching Energy	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGL12040WD	226 nC	23 Ohm	15 V 600 V	40 A	Trench Field Stop	391 W	TO-264-3	TO-264-3 TO-264AA	71 ns	1200 V	-55 °C	150 °C	2.9 V 15 V 40 A	Through Hole	100 A	1 mJ 4.1 mJ	45 ns 560 ns	80 A

Catalog

IGBT, 1200 V, 40 A Field Stop Trench

Key Features

• Maximum Junction Temperature : TJ= 150°C

• Positive Temperature Co-efficient for Easy Parallel Operating

• Low Saturation Voltage: VCE(sat)=2.3 V @ IC= 40 A

• 100% of The Parts Tested for ILM(1)

• Short Circuit Ruggedness > 5 us @ 150°C

• High Input Impedance

• RoHS Compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.