FDD6612A Series

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

Catalog

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDD6612A	MOSFET (Metal Oxide)	9.4 nC	N-Channel	9.5 A	30 A	2.8 W 36 W	660 pF	Surface Mount	3 V	4.5 V 10 V	20 V	TO-252 (DPAK)	30 V	20 mOhm	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

Key Features

• 30 A, 30 V

• RDS(on)= 20 mΩ @ VGS= 10 V

• RDS(on)= 28 mΩ @ VGS= 4.5 V

• Low gate charge (9nC typical)

• Fast switching

• High performance trench technology for extremelylow RDS(on)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), fast switching speed and extremely low RDS(ON)in a small package.