FFSP2065B-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-220-2L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-220-2L

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Qualification	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Technology	Capacitance @ Vr, F	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
ON Semiconductor FFSP2065B-F085	40 µA	175 ░C	-55 C	TO-220-2	AEC-Q101	TO-220-2	1.7 V	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	866 pF	Automotive	650 V
ON Semiconductor FFSP2065A	200 µA	175 ░C	-55 C	TO-220-2		TO-220-2		No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	1085 pF		650 V	25 A
ON Semiconductor FFSP2065B	40 µA	175 ░C	-55 C	TO-220-2		TO-220-2	1.7 V	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	866 pF		650 V	22.5 A

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-220-2L

Key Features

• Max Junction Temperature 175 oC

• Avalanche Rated 94 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• AEC-Q101 Qualified and PPAP Capable

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.