MTB2P50E Series

Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK

Catalog

Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	FET Type	Package / Case
ON Semiconductor MTB2P50ET4G	500 V	4 V	1183 pF	6 Ohm	Surface Mount	27 nC	2 A	MOSFET (Metal Oxide)	D2PAK	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK

Key Features

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Short Heatsink Tab Manufactured Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Pb-Free Package is Available

Description

P-Channel Enhancement-Mode Silicon GateThe D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on)capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.