FDD8796 Series

N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ

Catalog

N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ

Part	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor FDD8796	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	-55 °C	175 ░C	2.5 V	88 W	TO-252 (DPAK)	MOSFET (Metal Oxide)	35 A	2610 pF	5.7 mOhm	N-Channel	20 V	52 nC	25 V

Catalog

N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ

Key Features

• Max rDS(on)= 5.7mΩ at VGS= 10V, ID= 35A

• Max rDS(on)= 8.0mΩ at VGS= 4.5V, ID= 35A

• Low gate charge: Qg(10)= 37nC(Typ), VGS= 10V

• Low gate resistance

• Avalanche rated and 100% tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed.