SI4466 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 9.5A 8SO
| Part | Technology | FET Type | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | N-Channel | Surface Mount | 12 V | -55 °C | 150 °C | 1.4 V | 20 V | 9.5 A | 8-SOIC | 2.5 V 4.5 V | 8-SOIC | 3.9 mm | 0.154 in | 60 nC | 1.5 W |