SFH608 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
OPTOISO 5.3KV TRANS W/BASE 6DIP
| Part | Turn On / Turn Off Time (Typ) | Turn On / Turn Off Time (Typ) | Number of Channels | Operating Temperature [Max] | Operating Temperature [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Supplier Device Package | Current Transfer Ratio (Max) | Vce Saturation (Max) [Max] | Input Type | Package / Case | Package / Case | Package / Case | Current - DC Forward (If) (Max) | Current Transfer Ratio (Min) [Min] | Voltage - Output (Max) [Max] | Current - Output / Channel | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Through Hole | 5300 Vrms | 1.1 V | 6-DIP | 500 % | 400 mV | DC | 6-DIP | 0.3 in | 7.62 mm | 50 mA | 250 % | 55 V | 50 mA | |
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Surface Mount | 5300 Vrms | 1.1 V | 6-SMD | 200 % | 400 mV | DC | 6-SMD Gull Wing | 50 mA | 100 % | 55 V | 50 mA | |||
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Through Hole | 5300 Vrms | 1.1 V | 6-DIP | 320 % | 400 mV | DC | 6-DIP | 10.16 mm | 50 mA | 160 % | 55 V | 50 mA | 10.16 mm | |
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Surface Mount | 5300 Vrms | 1.1 V | 6-SMD | 200 % | 400 mV | DC | 6-SMD Gull Wing | 50 mA | 100 % | 55 V | 50 mA | |||
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Through Hole | 5300 Vrms | 1.1 V | 6-DIP | 200 % | 400 mV | DC | 6-DIP | 0.3 in | 7.62 mm | 50 mA | 100 % | 55 V | 50 mA | |
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Through Hole | 5300 Vrms | 1.1 V | 6-DIP | 125 % | 400 mV | DC | 6-DIP | 0.3 in | 7.62 mm | 50 mA | 63 % | 55 V | 50 mA | |
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Through Hole | 5300 Vrms | 1.1 V | 6-DIP | 200 % | 400 mV | DC | 6-DIP | 10.16 mm | 50 mA | 100 % | 55 V | 50 mA | 10.16 mm | |
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Surface Mount | 5300 Vrms | 1.1 V | 6-SMD | 320 % | 400 mV | DC | 6-SMD Gull Wing | 50 mA | 160 % | 55 V | 50 mA | |||
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Surface Mount | 5300 Vrms | 1.1 V | 6-SMD | 320 % | 400 mV | DC | 6-SMD Gull Wing | 50 mA | 160 % | 55 V | 50 mA | |||
Vishay General Semiconductor - Diodes Division | 7.5 µs | 8 µs | 1 | 100 °C | -55 °C | 5 µs | 7 µs | Surface Mount | 5300 Vrms | 1.1 V | 6-SMD | 500 % | 400 mV | DC | 6-SMD Gull Wing | 50 mA | 250 % | 55 V | 50 mA |