High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-3P(N), π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-3P(N), π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-3P(N), π-MOSⅧ
| Part | Drain to Source Voltage (Vdss) | Operating Temperature | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 900 V | 150 °C | 250 W | TO-3P(N) | 4 V | 46 nC | Through Hole | 10 V | SC-65-3 TO-3P-3 | 1.3 Ohm | 30 V | 2000 pF | N-Channel | 9 A | MOSFET (Metal Oxide) |