IPA60R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 600V 6.1A TO220-FP

Part	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPA60R600CPXKSA1	3.5 V	TO-220-3 Full Pack	550 pF	600 mOhm	N-Channel	6.1 A	28 W	27 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V
INFINEON IPA60R125C6E8191XKSA1
INFINEON IPA60R170CFD7XKSA1	4.5 V	TO-220-3 Full Pack		170 mOhm	N-Channel	8 A	26 W	28 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	650 V	Through Hole	10 V	1199 pF	PG-TO220-FP
INFINEON IPA60R160P6XKSA1	4.5 V	TO-220-3 Full Pack	2080 pF	160 mOhm	N-Channel	23.8 A	34 W	44 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V		PG-TO220-FP
INFINEON IPA60R190C6XKSA1	3.5 V	TO-220-3 Full Pack	1400 pF	190 mOhm	N-Channel	20.2 A	34 W	63 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V		PG-TO220-FP
INFINEON IPA60R120C7XKSA1	4 V	TO-220-3 Full Pack	1500 pF	120 mOhm	N-Channel	11 A	32 W		MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V		PG-TO220-FP	34 nC
INFINEON IPA60R125CPXKSA1	3.5 V	TO-220-3 Full Pack			N-Channel	25 A	35 W	70 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	650 V	Through Hole	10 V	2500 pF	PG-TO220-FP		125 mOhm
INFINEON IPA60R120P7XKSA1	4 V	TO-220-3 Full Pack		120 mOhm	N-Channel	26 A	28 W	36 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V	1544 pF	PG-TO220 Full Pack
INFINEON IPA60R450E6XKSA1	3.5 V	TO-220-3 Full Pack		450 mOhm	N-Channel	9.2 A		28 nC	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V	620 pF	PG-TO220-FP
INFINEON IPA60R330P6XKSA1		TO-220-3 Full Pack	1010 pF	330 mOhm	N-Channel	12 A	32 W		MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	600 V	Through Hole	10 V		PG-TO220-FP	22 nC