IMZA65R015 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 103 A, 650 V, 0.0132 OHM, TO-247
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide Junction Transistor) | 2792 pF | N-Channel | 5.6 V | 175 °C | -55 °C | 103 A | -7 V 23 V | Through Hole | 650 V | TO-247-4 | 13.2 mOhm | 79 nC | 341 W | 15 V 20 V | PG-TO247-4-8 |