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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Qualification | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | SC-59 SOT-23-3 TO-236-3 | 4.2 A | 793 pF | P-Channel | 45 mOhm | 310 mW 455 mW | MOSFET (Metal Oxide) | 150 °C | -55 °C | Surface Mount | AEC-Q101 | 19.2 nC | TO-236AB | 4.5 V 10 V | 30 V | 3 V | Automotive |