TP65H300 Series

Catalog

GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 6.5 A, 0.312 OHM, 9.6 NC, QFN, SURFACE MOUNT

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation TP65H300G4LSG-TR	3-PQFN (8x8)	650 V	312 mOhm	N-Channel	GaNFET (Gallium Nitride)	21 W	150 °C	-55 °C	9.6 nC	3-PowerDFN	8 V	Surface Mount	760 pF	18 V	2.6 V	6.5 A
Renesas Electronics Corporation TP65H300G4LSG-TR	3-PQFN (8x8)	650 V	312 mOhm	N-Channel	GaNFET (Gallium Nitride)	21 W	150 °C	-55 °C	9.6 nC	3-PowerDFN	8 V	Surface Mount	760 pF	18 V	2.6 V	6.5 A