QSD123 Series

Plastic Silicon Infrared Phototransistor

Catalog

Plastic Silicon Infrared Phototransistor

Part	Wavelength	Current - Dark (Id) (Max) [Max]	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [diameter]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Orientation	Viewing Angle	Mounting Type
ON Semiconductor QSD123	880 nm	100 nA	100 mW	100 °C	-40 °C	5 mm	Radial T 1 3/4	30 V	Top View	24 °	Through Hole

Plastic Silicon Infrared Phototransistor

• NPN silicon phototransistor

• Package type: T-1 3/4

• Notched emitter: QED12X/QED22X/QED23X

• Narrow reception angle: 24°C

• Daylight filter

• Package material and color: black epoxy

• High sensitivity

The QSD122, QSD123, QSD124 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.