FDMS3624S Series
Asymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET, 25V
Manufacturer: ON Semiconductor
Catalog
Asymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET, 25V
Key Features
• Q1: N-ChannelMax rDS(on)= 5.0 mΩ at VGS= 10 V, ID= 17.5 AlMax rDS(on)= 5.7 mΩ at VGS= 4.5 V, ID= 16 Al
• Q2: N-ChannelMax rDS(on)= 1.8 mΩ at VGS= 10 V, ID= 30 AlMax rDS(on)= 2.2 mΩ at VGS= 4.5 V, ID= 27 Al
• Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl
• RoHS Compliantl
Description
AI
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
