Catalog
650V 4A TO-220FM, Low-noise Power MOSFET
Description
AI
R6504ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Beta
⌘K
650V 4A TO-220FM, Low-noise Power MOSFET
650V 4A TO-220FM, Low-noise Power MOSFET
| Part | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | MOSFET (Metal Oxide) | 40 W | 15 nC | TO-220-3 Full Pack | 4 V | 650 V | 20 V | 4 A | 220 pF | 10 V | TO-220FM | 150 °C | Through Hole | N-Channel | 1.05 Ohm |