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25 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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25 V, N-channel Trench MOSFET
25 V, N-channel Trench MOSFET
| Part | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 150 °C | -55 °C | Surface Mount | 25 V | 4.5 V 10 V | MLPAK33 | 1.7 W 12.5 W | MOSFET (Metal Oxide) | 11.8 A 32 A | 16.6 nC | 8-PowerVDFN | 7.7 mOhm | 770 pF | 2.2 V | 20 V |