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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) [Max] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 330 pF | 1.8 A | 20 V | P-Channel | 1 V | Surface Mount | MOSFET (Metal Oxide) | 6.3 nC | 8 V | TO-236AB | 150 °C | -55 °C | 2.1 W 340 mW | 2.5 V | 4.5 V |