High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.19 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.19 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.19 Ω@10V, TO-220, DTMOSⅣ
| Part | Operating Temperature | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 130 W | 1350 pF | Through Hole | TO-220 | 3.7 V | TO-220-3 | N-Channel | 10 V | 600 V | 15.8 A | 38 nC | 190 mOhm | MOSFET (Metal Oxide) | 30 V |