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650V 15A TO-263, Low-noise Power MOSFET
Description
AI
R6515ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 15A TO-263, Low-noise Power MOSFET
650V 15A TO-263, Low-noise Power MOSFET
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 315 mOhm | 40 nC | MOSFET (Metal Oxide) | 650 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | 150 °C | 184 W | 910 pF | 15 A | 10 V | LPTS | N-Channel | 20 V | Surface Mount |