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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Grade | Qualification | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | SC-101 SOT-883 | 3 Ohm | MOSFET (Metal Oxide) | 9 pF | Surface Mount | 150 °C | -55 °C | N-Channel | 60 V | 2.5 V 10 V | 1.5 V | 315 pC | 3.1 W 710 mW | SOT-883 | Automotive | AEC-Q101 | 350 mA |