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80 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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80 V, P-channel Trench MOSFET
80 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Grade | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Qualification | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 2.8 V | MOSFET (Metal Oxide) | 2217 pF | P-Channel | 175 °C | -55 °C | Automotive | LFPAK56 Power-SO8 | 80 V | Surface Mount | SC-100 SOT-669 | AEC-Q101 | 55 mOhm | 60 nC | 150 W | 35 A | 4.5 V 10 V |