Catalog
1200V, 20A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 20A, THD, Silicon-carbide (SiC) SBD
1200V, 20A, THD, Silicon-carbide (SiC) SBD
| Part | Speed | Package / Case | Supplier Device Package | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Mounting Type | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If [Max] | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 500 mA | TO-220-2 | TO-220ACFP | 400 µA | 0 ns | Through Hole | SiC (Silicon Carbide) Schottky | 1.2 kV | 1050 pF | 1.6 V | 175 °C |