BUK7J2R4-80M Series

N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E

Catalog

N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Nexperia USA Inc. BUK7J2R4-80MX	175 °C	-55 °C	127 nC	Automotive	20 V	80 V	10 V	MOSFET (Metal Oxide)	6700 pF	AEC-Q101	Surface Mount	2.4 mOhm	SOT-1023 4-LFPAK	LFPAK56 Power-SO8	N-Channel	231 A	294 W

Catalog

N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E

Description

Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSoncapability, housed in a LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.