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40 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, P-channel Trench MOSFET
40 V, P-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Rds On (Max) @ Id, Vgs | Grade | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 4.5 V 10 V | AEC-Q101 | 12.4 mOhm | Automotive | 64 A | 3800 pF | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | Surface Mount Wettable Flank | MLPAK33 | 108 nC | 2.7 V | 8-PowerVDFN | 94 W | P-Channel | 20 V |