2SK3128 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 30V 60A TO3P
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 66 nC | 2300 pF | TO-3P(N) | 20 V | 30 V | SC-65-3 TO-3P-3 | N-Channel | 3 V | 150 W | 150 °C | 12 mOhm | 10 V | MOSFET (Metal Oxide) | 60 A |