SI6966 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 20V 4A 8TSSOP
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Configuration | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [custom] | Package / Case [custom] | Drain to Source Voltage (Vdss) | Technology | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-TSSOP | 4 A | 2 N-Channel (Dual) | 30 mOhm | 8-TSSOP | 0.173 " | 4.4 mm | 20 V | MOSFET (Metal Oxide) | 830 mW | -55 °C | 150 °C | Surface Mount | 1.4 V | Logic Level Gate | 20 nC | |
Vishay General Semiconductor - Diodes Division | 8-TSSOP | 2 N-Channel (Dual) | 30 mOhm | 8-TSSOP | 0.173 " | 4.4 mm | 20 V | MOSFET (Metal Oxide) | 1.25 W | -55 °C | 150 °C | Surface Mount | 600 mV | Logic Level Gate | 25 nC |