TLP185(SE Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

ISOLATORS AND SOLID STATE RELAYS FOR ENHANCED SAFETY AND EFFICIENCY | TOSHIBA, PHOTOCOUPLER (PHOTOTRANSISTOR OUTPUT), DC INPUT, 3750 VRMS, 4PIN SO6

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - DC Forward (If) (Max) [Max]	Mounting Type	Package / Case	Current Transfer Ratio (Min)	Output Type	Current Transfer Ratio (Max) [Max]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Rise / Fall Time (Typ)	Turn On / Turn Off Time (Typ)	Vce Saturation (Max) [Max]	Input Type	Number of Channels [custom]	Current - Output / Channel [custom]	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP185(GRH-TL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	150 %	Transistor	300 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA
Toshiba Semiconductor and Storage TLP185(GRL-TL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads		Transistor	200 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA	100 %
Toshiba Semiconductor and Storage TLP185(TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	50 %	Transistor	600 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA
Toshiba Semiconductor and Storage TLP185(YH-TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads		Transistor		3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA	75 %	150 %
Toshiba Semiconductor and Storage TLP185(GB-TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads		Transistor	600 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA	100 %
Toshiba Semiconductor and Storage TLP185(GR-TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads		Transistor	300 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA	100 %
Toshiba Semiconductor and Storage TLP185(V4GRTL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	50 %	Transistor with Base	600 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA
Toshiba Semiconductor and Storage TLP185(V4GBTL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	50 %	Transistor with Base	600 %	3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA
Toshiba Semiconductor and Storage TLP185(BL-TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	200 %	Transistor		3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA		400 %
Toshiba Semiconductor and Storage TLP185(Y-TPL,SE	-55 C	110 °C	50 mA	Surface Mount	6-SOIC (0.173" 4.40mm Width) 4 Leads	50 %	Transistor		3750 Vrms	1.25 V	6-SOP	2 µs 3 µs	3 µs	300 mV	DC	1	50 mA		150 %