FQD18N20V2 Series

Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK

Part	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
ON Semiconductor FQD18N20V2TM	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	26 nC	1080 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	140 mOhm	10 V	TO-252AA	5 V	30 V	15 A	Surface Mount	200 V	2.5 W 83 W

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK

Key Features

• 15A, 200V, RDS(on)= 140mΩ(Max.) @VGS= 10 V, ID= 7.5A

• Low gate charge ( Typ. 20nC)

• Low Crss( Typ. 25pF)

• 100% avalanche testedcapability

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.