2SK3132 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 500V 50A TO3P
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Mounting Type | Technology | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 A | 3.4 V | TO-3P(L) | 10 V | 95 mOhm | 30 V | Through Hole | MOSFET (Metal Oxide) | TO-3PL | 500 V | 250 W | 280 nC | 11000 pF | N-Channel | 150 °C |