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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Package / Case | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | SC-74 SOT-457 | 6-TSOP | 4.46 W | 530 mW | 635 pF | 30 V | 150 °C | -55 °C | Surface Mount | 900 mV | 12 nC | N-Channel | 12 V | 4.5 A | 1.5 V 4.5 V | 40 mOhm |