SIHFL9014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 60V 1.8A SOT223
| Part | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2 W 3.1 W | MOSFET (Metal Oxide) | 12 nC | 4 V | 1.8 A | 270 pF | TO-261-4 TO-261AA | Surface Mount | 10 V | P-Channel | 60 V | SOT-223 | 500 mOhm | 20 V | -55 °C | 150 °C |