SQJ152 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 123A PPAK SO-8
| Part | FET Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Grade | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Qualification | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 136 W | 2.2 V | -55 °C | 175 ░C | 4.5 V 10 V | Automotive | MOSFET (Metal Oxide) | 5 mOhm | 34 nC | 40 V | 20 V | 1633 pF | Surface Mount | AEC-Q101 | PowerPAK® SO-8 | 123 A | PowerPAK® SO-8 |