SSM3K329 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N CH 30V 3.5A 2-3Z1A
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | 12 V | N-Channel | 1 V | MOSFET (Metal Oxide) | 1 W | 1.8 V 4 V | SOT-23F | Surface Mount | 126 mOhm | 150 °C | 1.5 nC | 3.5 A | SOT-23-3 Flat Leads | 123 pF |