TSM210 Series

Catalog

20V, 6.7A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM210N02CX	6.7 A	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23	5.8 nC	1.56 W	10 V	800 mV	N-Channel	Surface Mount	600 pF	150 °C	1.8 V	4.5 V	21 mOhm	20 V
Taiwan Semiconductor Corporation TSM210N02CX RFG	6.7 A	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23		1.56 W	10 V	800 mV	N-Channel	Surface Mount	600 pF	150 °C	1.8 V	4.5 V		20 V	25 mOhm	4 nC