SIHA100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 30A TO220
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N-Channel | 35 W | 50 nC | 10 V | 30 A | MOSFET (Metal Oxide) | 100 mOhm | 30 V | 600 V | 1851 pF | TO-220 Full Pack | TO-220-3 Full Pack | Through Hole | 5 V |