SIHA6 Series

Catalog

MOSFET N-CH 800V 5A TO220

Part	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHA6N80AE-GE3	4 V	Through Hole	N-Channel	422 pF	30 V	800 V	5 A	10 V	-55 °C	150 °C	22.5 nC	950 mOhm	TO-220 Full Pack	MOSFET (Metal Oxide)	TO-220-3 Full Pack
Vishay General Semiconductor - Diodes Division SIHA6N80E-GE3	4 V	Through Hole	N-Channel	827 pF	30 V	800 V	5.4 A	10 V	-55 °C	150 °C		940 mOhm	TO-220 Full Pack	MOSFET (Metal Oxide)	TO-220-3 Full Pack	31 W	44 nC