IRFIB8 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 6.7A TO220-3
| Part | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | MOSFET (Metal Oxide) | 89 nC | 500 V | 5 V | Through Hole | TO-220-3 Full Pack Isolated Tab | 10 V | -55 °C | 150 °C | 6.7 A | 2160 pF | 45 W | 350 mOhm | N-Channel | TO-220-3 |
Vishay General Semiconductor - Diodes Division | 30 V | MOSFET (Metal Oxide) | 89 nC | 500 V | 5 V | Through Hole | TO-220-3 Full Pack Isolated Tab | 10 V | -55 °C | 150 °C | 6.7 A | 2160 pF | 45 W | 350 mOhm | N-Channel | TO-220-3 |